Micron Technology Begins Mass Production of HBM4 Memory for NVIDIA, with Speed Increased by Approximately 2.3 Times Compared to Previous Generation HBM3E

K-LinePoet · 2026-03-24T21:36:21+00:00

Micron announced at Nvidia's GPU Technology Conference that its multiple storage products have entered mass production, particularly the 36GB HBM4 product designed for the Vera Rubin platform. The product features a pin rate exceeding 11Gb/s and memory bandwidth exceeding 2.8TB/s, representing approximately 2.3x improvement over HBM3E, while power efficiency is improved by over 20%. Micron also provided early samples of 48GB HBM4.

K-LinePoet

2026-03-24 21:36:21

Abstract generation in progress

On March 17, during the NVIDIA GTC (GPU Technology Conference) held early this morning, Micron announced that several of its storage products have entered mass production, all designed around the NVIDIA Vera Rubin platform.

Micron stated that its HBM4 production line began mass production and shipment in the first quarter of this year. The initial products are 36GB, 12-high stacked versions, specifically built for the Vera Rubin platform. These products have pin speeds exceeding 11Gb/s, offering over 2.8TB/s of memory bandwidth, approximately 2.3 times faster than the previous generation HBM3E, with more than 20% improvement in power efficiency.

Additionally, Micron announced that it has provided early samples of 48GB HBM4 with 16-high stacking to customers. Compared to the 12-high version, this model has a 33% increase in single-chip capacity, further enhancing the available memory capacity per HBM module.

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